Absolute photoionization cross sections and resonance structure of doubly ionized silicon in the region of the 2p-1 threshold: Experiment and theory

Physical Review A - Atomic, Molecular, and Optical Physics

Volumn 68, Issue 5, 2003, Pages 527121-527127

  Mosnier, J P ^a   Sayyad, M H ^a,f   Kennedy, E T ^a   Bizau, J M ^b   Cubaynes, D ^b   Wuilleumier, F J ^b   Champeaux, J P ^c   Blancard, C ^c   Hari Varma, R ^d   Banerjee, T ^d   Deshmukh, P C ^d   Manson, S T ^e  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c CEA DIF   (France)

^d INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^e GEORGIA STATE UNIVERSITY   (United States)

^f THE UNIVERSITY OF AGRICULTURE   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; DATA REDUCTION; ELECTRON CYCLOTRON RESONANCE; ELECTRON ENERGY LEVELS; LIGHT ABSORPTION; OPTICAL RESOLVING POWER; PHOTONS; POSITIVE IONS; QUANTUM THEORY; SILICON; SPECTROMETRY; SYNCHROTRON RADIATION;

MULTI-CHANNEL QUANTUM DEFECT THEORY; MULTICONFIGURATION ATOMIC STRUCTURE; PHOTON ENERGY; RELATIVISTIC RANDOM-PHASE APPROXIMATION (RRPA);

PHOTOIONIZATION;

EID: 0942267724     PISSN: 10502947     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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