Electric field effects in single semiconductor quantum dots observed by scanning tunneling luminescence

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2344-2347

  Hakanson U ^a   Hakanson H ^a,b   Johansson, M K J ^a   Samuelson, L ^a   Pistol, M E ^a  

^a LUND UNIVERSITY   (Sweden)

^b GS Development AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; BANDPASS FILTERS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; FERMI LEVEL; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTONS; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

SCANNING TUNNELING LUMINESCENCE; STARK SHIFT; TUNNELING CURRENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0942267569     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1620511     Document Type: Article

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