Far-infrared resonant Faraday effect in semiconductors

Journal of the Physical Society of Japan

Volumn 72, Issue 12, 2003, Pages 3276-3285

  Suzuki, Masato ^a   Fujii, Ken Ichi ^a   Ohyama, Tyuzi ^a   Kobori, Hiromi ^b   Kotera, Nobuo ^c  

^a OSAKA UNIVERSITY   (Japan)

^b KONAN UNIVERSITY   (Japan)

^c KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Cycrotron resonance; Far infrared; Resonant Faraday effect; Shallow impurity; Two dimensional electron system

Indexed keywords

ALUMINUM; ARSENIC; GALLIUM; GERMANIUM;

ARTICLE; CONTACT ANGLE; CYCLOTRON; DIELECTRIC CONSTANT; ELECTRON; INFRARED SPECTROSCOPY; LOW TEMPERATURE; MEASUREMENT; MODEL; OSCILLATION; OSCILLATOR; POLARIZATION; SEMICONDUCTOR; THICKNESS;

EID: 0842333290     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.72.3276     Document Type: Article

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