Comparative optical investigations of sintered and monocrystalline black and green silicon carbide (SiC)

Journal of Solid State Chemistry

Volumn 177, Issue 2, 2004, Pages 580-585

  Werheit, H ^a   Schwetz, K A ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b Wacker Ceramics   (Germany)

Author keywords

Black SiC; Doped SiC; Green SiC; Optical absorption; Optical reflectivity; SiC; Silicon carbide; Single crystal SiC; Sintered SiC

Indexed keywords

CRYSTAL STRUCTURE; DOPING (ADDITIVES); LIGHT EXTINCTION; OXIDATION; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; SINTERING;

MONOCRYSTALLINE MATERIALS;

SILICON CARBIDE;

CARBON; SILICON CARBIDE;

CHEMICAL STRUCTURE; COLOR; CONFERENCE PAPER; CRYSTAL STRUCTURE; CRYSTALLIZATION; LIQUID; OXIDATION; SOLID STATE;

EID: 0842331082     PISSN: 00224596     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jssc.2003.04.006     Document Type: Conference Paper

References (15)

1. W.V. Münch, Silicon carbide, in: M. Schulz, H. Weiss (Eds.), Landolt-Boernstein, Numerical Data and Functional Relationships in Science and Technology, Vol. III 17c, Springer, Berlin, 1984.
2. Pensl G., Choyke W.J. Physica B. 185:1993;264.
3. Schwetz K.A. SiC based hard materials. Riedel R. Handbook of Ceramic Hard Materials. Vol. 2:2000;683-748 Wiley-VCH, Weinheim, NY.
4. European Patent 1,070,686B1 (21 November 2001), Liquid phase sintered silicon carbide shaped bodies having improved fracture toughness as well as high electrical resistance, and method of making them.
5. Ruska J., Gauckler L.J., Lorenz J., Rexer H.U. J. Mater. Sci. 14:1979;2013-2017.
6. Sigl L.S., Kleebe H.J. J. Am. Ceram. Soc. 76:1993;773-776.
7. H.P. Martin, J. Adler, Design of electrical and thermal properties for liquid phase sintered SiC, Paper presented at Materialsweek 2001, Messe-München, October, Wiley-VCH, Weinheim, NY, 2001, in press. H.P. Martin, J. Adler, in: J. Kriegesmann (Ed.), Keranische Werkstoffe, Chap. 4.3.2.3, 68th suppl., DWD-Verlag, Köln, 2002, pp. 1-35 (in German).
8. J. Hassler, Doctoral Thesis, TU Kosice, 2001.
9. Schwetz K.A., Sigl L.S. Herstellung und Eigenschaften von HIPSSiC Bauteilen für Brennkammern von stätionaren Gasturbinen. Kranzmann A., Gramberg U.V. Symposium 3, Werkstoffe für die Energietechnik, Werkstoffwoche '98, München. 1999;15-24 Wiley-VCH, Weinheim, NY.
10. H. Knoch, K.A. Schwetz, W.D. Long, New method for the quantitative analysis of free carbon in SiC, in: J.D. Cawley et al. (Eds.), SiC - Symposium, 2-5 August 1987, Columbus, OH, Ceramic Transactions, Vol. 2, Silicon Carbide '87, Am. Ceram. Soc. Inc., Westerville, OH, 1989, pp. 105-111.
11. R. Hamminger, G. Grathwohl, F. Thümmler, Microchemistry and high temperature properties of sintered SiC, in: Proceedings Second Conference Science of Hard Materials (Rhodos), Institute of Physics Conference Series No. 75, Adam Hilger Ltd., Bristol, 1986, pp. 279-292 (Chapter 4).
12. Shaffer P.T.B. Mater. Res. Bull. 4:1969;213-220.
13. Jaumann J., Werheit H. Z. Naturforsch. 24a:1969;1131.
14. Smith R.A. Wave Mechanics in Crystalline Solids. 1961;Chapman & Hall, London.
15. Lucovsky G. Solid State Commun. 3:1965;299.