Quantum efficiency of photoinduced defect creation in amorphous As 2Se3 films

Journal of Optoelectronics and Advanced Materials

Volumn 4, Issue 1, 2002, Pages 93-98

  Meherun Nessa, ^a   Shimakawa, K ^a   Ganjoo, A ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

Amorphous chalcogenide; Photoinduced defect; Quantum efficiency; Structural flexibility

Indexed keywords

DEFECTS; EFFICIENCY; ENERGY GAP; SELENIUM COMPOUNDS;

ABSORBED PHOTONS; AMORPHOUS CHALCOGENIDE; DEFECT CREATION; PHOTOCURRENT MEASUREMENT; PHOTOINDUCED DEFECTS; RATE EQUATIONS; STRUCTURAL FLEXIBILITIES; SUB-BANDGAP;

QUANTUM EFFICIENCY;

EID: 0842269328     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. K. Shimakawa, A. Kolobov, S. R. Elliot, Adv. Phys. 44, 533 (1995).
2. A. Ganjoo, N. Yoshida, K. Shimakawa, Recent Research Developments in Applied Physics, edited by M. Kawasaki, N. Ashgriz, and R. Anthony (Research Signpost, Trivandrum, 1998) p. 129.
3. Y. Kuzukawa, A. Ganjoo, K. Shimakawa, Y. Ikeda, Phil. Mag. B79, 249 (1999).
4. D. K. Biegelsen, R. A. Street, Phys. Rev., Lett. 44, 803 (1980).
5. K. Shimakawa, S. Inami, S. R. Elliot, Phys. Rev. B 42, 11857 (1990).
6. K. Shimakawa, S. Inami, T. Kato, S. R. Elliott, Phys. Rev. B46, 10062 (1992).
7. A. Ganjoo, K. Shimakawa, H. Kamiya, E. A. Davis, Jai Singh, Phys. Rev. B, 62, R14601 (2000).