Implementation of CVD low-k dielectrics for high-volume production

Solid State Technology

Volumn 47, Issue 1, 2004, Pages 60-62+64

  Ruelke, Hartmut ^a   Huebler, Peter ^a   Streck, Christof ^a   Gotuaco, Meggy ^b   Senninger, Wolfgang ^c  

^a ADVANCED MICRO DEVICES   (United States)

^b APPLIED MATERIALS INC   (United States)

^c Applied Materials GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELASTIC MODULI; ELECTROMIGRATION; HARDNESS; INTERFACES (MATERIALS); MICROPROCESSOR CHIPS; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

CARBON-DOPED SILICON OXIDES; LOW-PERMITTIVITY INTEGRATION;

ULSI CIRCUITS;

EID: 0842268515     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. J.T. Wetzel, et.al., "Evaluation of Material Property Requirements and Performance of Ultra-low Dielectric Constant Insulators for Inlaid Copper Metallization," IEEE International Electron Devices Meeting, 2001.
2. A.H. Perera, et al., "A Versatile 0.13μm CMOS Platform Technology Supporting High Performance and Low Power Applications," IEEE International Electron Devices Meeting, 2001.
3. C. Streck, et al., "Manufacturing Implementation of Low-k Dielectrics for Copper Damascene Technology," IEEE/Semi Advanced Semiconductor Manufacturing Conf., 2002.
4. J. Martin, et al., "Integration of SiCN as a Low Etch Stop and Cu Passivation in a High Performance Cu/Low-k Interconnect," IEEE International Electron Devices Meeting, 2002.
5. M. Hatano, et al., "EM Lifetime Improvement of Cu Damascene Interconnects by P-SiC Cap Layer," IEEE International Electron Devices Meeting, 2002.
6. E. Ogawa, et al., 2002 IEEE IRPS, pp. 312-321.