Influences of structure around gate-edge on high electric field strength in MISFETs with high-k gate dielectrics

IEEE Transactions on Electron Devices

Volumn 51, Issue 1, 2004, Pages 68-73

  Ono, Mizuki ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Electric fields; Gate dielectrics; Gate edge structure; High k; Reliability

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRODES; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; INTERFACES (MATERIALS); LSI CIRCUITS; PERMITTIVITY; POLYSILICON; RELIABILITY;

ELECTRIC FIELD STRENGTH; GATE DIELECTRICS; GATE EDGE STRUCTURE;

MISFET DEVICES;

EID: 0742304010     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.820684     Document Type: Article

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