New mechanism of magnetoresistance in bulk semiconductors: Boundary condition effects

Solid State Communications

Volumn 97, Issue 12, 1996, Pages 1069-1072

  Gonzalez De La Cruz, G ^a   Gurevich, Yu G ^a   Prosentsov, V V ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b NATIONAL TECHNICAL UNIVERSITY   (Ukraine)

Author keywords

A. semiconductors; D. electronic transport; D. galvanomagnetic effects

Indexed keywords

BOUNDARY CONDITIONS; CURRENT DENSITY; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE;

BULK SEMICONDUCTORS; GALVANOMETRIC EFFECTS;

SEMICONDUCTOR MATERIALS;

EID: 0642369655     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00032-4     Document Type: Article

References (5)

1. O. Madelung, Physics of III-V compounds (Wiley, New York, 1964).
2. F. G. Bass, V. S. Bochkov, and Yu. G. Gurevich, Corrent-voltage characteristics of bounded semiconductors, Sov. Phys. - Semicond. 7 (1973) 1-20.
3. I. T. Akhieser, Yu. G. Gurevich, and N. Zakirov, Geometry of a sample and galvanomagnetic effects in semiconductors, Semiconductors 27 (1993) 349-352.
4. Yu. F. Sokolov and V. V. Gastev, Magnetoresistance of finite samples of n-type InSb at 77K, Sov. Phys. - Semicond. 9 (1975) 1116-1119.
5. Yu. G. Gurevich and O. I. Mashkievich, The electron-phonon drag and transport phenomena in semiconductors, Phys. Rep. 181 (1989) 327-394.