Bandgap shrinkage of degenerate p-type GaAs by photoluminescence spectroscopy

Materials Chemistry & Physics

Volumn 42, Issue 2, 1995, Pages 143-147

  Feng, M S ^a   Ares Fang, C S ^b   Chen, H D ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Sinonar Corp   (Taiwan)

Author keywords

Bandgap shrinkage; GaAs; Photoluminescence; Spectroscopy

Indexed keywords

EID: 0642301744     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(95)01566-3     Document Type: Article

References (27)

1. Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4
2. Enhanced hot-electron photoluminescence from heavily carbon-doped GaAs
3. Device-related material properties of heavily doped gallium arsenide
4. Band-gap narrowing in GaAs using a capacitance method
5. Local approximations for the exchange interaction between valence and core electrons
6. Photoluminescence spectra of Sn doped GaAs epitaxial layers: Influence of epitaxial process parameters