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Solid State Communications

Volumn 83, Issue 1, 1992, Pages 37-39

Transient photoconductivity in Si-doped Al0.26Ga0.74As

(2) Ghosh, Subhasis a Kumar, Vikram a

a INDIAN INSTITUTE OF SCIENCE (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0642282899 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1098(92)90009-X Document Type: Article

Times cited : (6)

References (10)

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- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
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- Investigation of persistent photoconductivity in Si-dopedn-Al x Ga1?x as grown by molecular beam epitaxy
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- Kunzel¹ Fischer² Knecht³ Ploog⁴

6
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- Chand¹ Henderson² Klem³ Masselink⁴ Fischer⁵ Chang⁶ Morkoc⁷

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- Chadi¹ Chang²

8
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- S. Ghosh and V. Kumar (to be published)

9
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- Negative-U Properties for Interstitial Boron in Silicon
- (1982) Physical Review Letters , vol.48 , pp. 1271
- Haris¹ Newton² Watkins³

10
- 4243687662
- (1991) Phys. Rev. Lett. , vol.66 , pp. 68
- Dobaczewski¹ Kazor²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.