Sb doping of Si molecular-beam epitaxial layers: Influence of the substrate misorientation

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 12, 1997, Pages 7615-7622

  Ladeveze M ^a   Bassani, F ^a   Arnaud d'Avitaya F ^a   Treglia G ^a   Dubois, C ^b  

^a CNRS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0642274294     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.7615     Document Type: Article

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