Roughening of the surface of an Si layer grown on an Si(111)-(7 × 7) superlattice

Surface Science

Volumn 357-358, Issue , 1996, Pages 414-417

  Shigeta, Y ^a   Endo, J ^a   Fujino, H ^a   Maki, K ^a  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

Author keywords

Crystalline amorphous interfaces; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

ATTENUATION; CRYSTAL ATOMIC STRUCTURE; FILM GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR SUPERLATTICES; SILICON; SURFACE STRUCTURE;

ATTENUATION CONSTANT; CRYSTALLINE AMORPHOUS INTERFACES; DISTORTED MULTILAYER HILLOCKS; INTENSITY OSCILLATION; LAYER BY LAYER GROWTH; TOPOGRAPHY;

SURFACE ROUGHNESS;

EID: 0542428379     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00190-2     Document Type: Article

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