Characterization of p-n junctions of diamond and c-BN by cathodoluminescence and electron-beam-induced current

Journal of Physics Condensed Matter

Volumn 16, Issue 2, 2004, Pages

  Sekiguchi, T ^a   Koizumi, S ^a   Taniguchi, T ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; DIAMONDS; DIFFUSION; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; ELECTRON BEAMS; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; ULTRAVIOLET RADIATION;

ELECTRON BEAM INDUCED CURRENT (EBIC); WIDE-GAP SEMICONDUCTORS;

SEMICONDUCTOR JUNCTIONS;

EID: 0442311020     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/2/011     Document Type: Conference Paper

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