Structural, electronic and optical properties of semiconducting rhenium silicide

Journal of Physics Condensed Matter

Volumn 16, Issue 3, 2004, Pages 303-312

  Shaposhnikov, V L ^a   Krivosheeva, A V ^a   Ivanenko, L I ^a   Filonov, A B ^a   Borisenko, V E ^a   Rebien, M ^b   Henrion, W ^b   Migas, D B ^c   Miglio, L ^c   Behr, G ^d   Schumann, J ^d  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b HAHN MEITNER INSTITUT   (Germany)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

^d IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; ELECTRONIC PROPERTIES; ELLIPSOMETRY; OPTICAL PROPERTIES; PERMITTIVITY; POLYCRYSTALS; RHENIUM COMPOUNDS;

BAND DISPERSION; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; SEMICONDUCTING RHENIUM SILICIDE; ULTRASOFT PSEUDOPOTENTAIL LINEARIZED AUGMENTED PLANE WAVE METHODS;

SEMICONDUCTOR MATERIALS;

EID: 0442295511     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/3/010     Document Type: Article

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