Enhancing yield through argon/nitrogen cryokinetic aerosol cleaning after via processing

MICRO

Volumn 17, Issue 6, 1999, Pages 33-43

  Butterbaugh, Jeffery W ^a,c,d,e   Loper, Steve ^a,e   Thomes, Greg ^a,f   Sheu, Dale ^b,g,h  

^a FSI International   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c FSI International   (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^e UNIVERSITY OF MINNESOTA   (United States)

^f Global Business Leadership Department   (United States)

^g UNIVERSITY OF ARIZONA   (United States)

^h NEW MEXICO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348233191     PISSN: 10810595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. The National Technology Roadmap for Semiconductor Technology Needs (San Jose: Semiconductor Industry Association, 1997).
2. JJ Wu et al., "Wafer Cleaning with Cryogenic Argon Aerosols," Semiconductor International 19, no. 9 (1996):113-118.
3. JF Weygand et al., "Cleaning Silicon Wafers with an Argon/Nitrogen Cryogenic Aerosol Process," MICRO 15, no. 4 (1997): 47-54.
4. N Narayanswami, "On the Generation of Cryogenic Aerosols for Wafer Processing," Cleaning Technology in Semiconductor Device Manufacturing V, ECS Proceedings 97, no. 35 (1997): 357-364.
5. N Narayanswami, "Thermophoresis Assisted Cryogenic Aerosol Cleaning of Wafers," Cleaning Technology in Semiconductor Device Manufacturing V, ECS Proceedings 97, no. 35 (1997): 350-356.