Ex-situ investigation of indium segregation in inGaAs/GaAs quantum wells using high-resolution x-ray diffraction

Journal of Applied Physics

Volumn 94, Issue 11, 2003, Pages 7050-7052

  Martini, S ^a   Quivy, A A ^a   Da Silva, M J ^a   Lamas, T E ^a   Da Silva, E C F ^a   Leite, J R ^a   Abramof, E ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFRACTOMETERS; MOLECULAR BEAM EPITAXY; OPTICAL RESOLVING POWER; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY DIFFRACTION;

DYNAMICAL THEORY; X-RAY SPECTRA;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0348223283     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1621738     Document Type: Article

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