Effects of dry etching processes on exciton and polariton characteristics in ZnTe

Journal of Applied Physics

Volumn 94, Issue 11, 2003, Pages 7144-7148

  Sun, J H ^a   Xie, W B ^a   Shen, W Z ^a   Ogawa, H ^b   Guo, Q X ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTALS; DENSITY (SPECIFIC GRAVITY); DRY ETCHING; ENERGY GAP; HEATING FURNACES; HIGH TEMPERATURE EFFECTS; LIGHT REFLECTION; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; PHOTONS; REACTIVE ION ETCHING; SPUTTERING;

PLASMA POWER; REFLECTION SPECTRA; SURFACE DAMAGE LAYERS; TEMPERATURE-DEPENDENT BEHAVIOR;

ZINC COMPOUNDS;

EID: 0348223201     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1624488     Document Type: Article

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