Compositional dependence of electrical properties of highly (100)-/(001)-oriented Pb(Zr,Ti)O3 thick films prepared on Si substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 9 B, 2003, Pages 5922-5926

  Yokoyama, Shintaro ^a   Honda, Yoshihisa ^a   Morioka, Hitoshi ^a   Asano, Gouji ^a   Oikawa, Takahiro ^a   Iijima, Takashi ^b   Matsuda, Hirofumi ^b   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Coexistence; Field induced strain; MOCVD; MPB; PZT

Indexed keywords

CERAMIC MATERIALS; COMPOSITION; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; ELECTRIC FIELDS; FERROELECTRICITY; LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; SINTERING; STRAIN; X RAY DIFFRACTION ANALYSIS;

COEXISTENCE; FERROELECTRIC FILMS; FIELD INDUCED STRAIN; MORPHOTROPIC PHASE BOUNDARY;

THICK FILMS;

EID: 0348209189     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5922     Document Type: Article

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