V-band fully-integrated TX/RX single-chip 3-D MMICs using commercial GaAs pHEMT technology for high-speed wireless applications

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 97-100

  Nishikawa, Kenjiro ^a   Piernas, Belinda ^a,b   Nakagawa, Tadao ^a   Araki, Katsuhiko ^a   Cho, Keizo ^a  

^a NTT Network Innovation Laboratories   (Japan)

^b Fujitsu Compound Semiconductor Inc   (United States)

Author keywords

GaAs; H igh integration; Millimeter wave; MMIC; pHEMT; Receiver; Three dimensional; Transmitter

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; TRANSCEIVERS;

SINGLE CHIP RECEIVER; SINGLE CHIP TRANSMITTER;

WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 0348195885     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252372     Document Type: Conference Paper

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