New strain-relieving microstructure in pure-Ge/Si short-period superlattices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1595-1598

  Sunamura, H ^a,c   Usami, N ^a   Shiraki, Y ^a   Fukatsu, S ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348183833     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589945     Document Type: Article

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