Enhanced Yb3+-related 0.98 μm emission in porous silicon and its time decay characteristics

Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 1005-1008

  Kimura, Tadamasa ^a   Nishida, Yasuhiro ^a   Yokoi, Akinori ^a   Saito, Riichiro ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348166223     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366789     Document Type: Article

References (8)

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