Evaluation of hot-hole-induced interface traps at the tunnel-SiO2 (3.5 nm)/Si interface by the conductance technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1398-1406

  Ogawa, Shigeo ^a   Kobayashi, Toshio ^a   Nakayama, Satoshi ^a   Sakakibara, Yutaka ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Avalanche injection technique; Conductance technique; Interface trap estimation; MOS tunnel structures; SILC; Tunnel gate oxides; Tunnel SiO2 Si interface; Tunneling leakage

Indexed keywords

EID: 0348153037     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1398     Document Type: Review

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