A magnetic-field-effect transistor and spin transport

Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4577-4579

  Gurzhi, R N ^a   Kalinenko, A N ^a   Kopeliovich, A I ^a   Yanovsky, A V ^a   Bogachek, E N ^b   Landman, Uzi ^b  

^a B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; FERMI LEVEL; FERROMAGNETIC MATERIALS; INTERFACES (MATERIALS); MAGNETIC DEVICES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETORESISTANCE; SEMICONDUCTING SELENIUM;

GIANT NEGATIVE MAGNETORESISTANCE; MAGNETIC-FIELD-EFFECT TRANSISTOR; NONMAGNETIC CONDUCTING CHANNEL; SPIN TRANSPORT; SPIN-POLARIZED CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 0348107243     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1630839     Document Type: Article

References (7)

1. Semiconductor Spintronics and Quantum Computation, edited by D. D. Awschalom, D. Loss, and N. Samarth (Springer, Berlin, 2002).
2. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
3. A. G. Aronov, JETP Lett. 24, 32 (1976).
4. P. C. van Son, H. van Kempen, and P. Wyder, Phys. Rev. Lett. 58, 2271 (1987).
5. G. Schmidt, G. Richter, P. Grabs, C. Gould, D. Ferrand, and L. W. Molenkamp, Phys. Rev. Lett. 87, 227203 (2001).
6. R. N. Gurzhi, A. N. Kalinenko, A. I. Kopeliovich, A. V. Yanovsky, E. N. Bogachek, and U. Landman (unpublished).
7. Spin Electronics, edited by M. Ziese and M. J. Thornton (Springer, Berlin, 2001).