Influence of silicon surface carbon contamination on oxide quality and SiO2-Si systems properties

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 1783, Issue , 1992, Pages 356-359

  Beck, Romuald B ^a   Brożek, Tomasz ^a   Rużyłło, Jerzy ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS; SILICA; SILICON OXIDES;

CARBON CONTAMINATION; ELECTROPHYSICAL PROPERTIES; INTERFACE PROPERTY; SILICON SUBSTRATES; SILICON SURFACES; SIO2-SI INTERFACE; STRUCTURAL DAMAGES; SUBSURFACE REGIONS;

SILICON WAFERS;

EID: 0348013630     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.131037     Document Type: Conference Paper

References (4)

1. R. B. Beck, S. Hossaim, J. Ruzytto, R. Tressler, "The Influence of Carbon on Thermal Oxidation of Silicon", presented at the "Ultra Clean Technology and Cluster Tools" Conference in Oxford 1991, to be published by Springer Verlag (1991)
2. T. Brozek and A. Chojnacki "Measurement System for Evaluation of Dielectric Strength of Thin Dielectric Layers for VLSI", Proc. Int. AMSE Conf Signals & Systems, Warsaw 1991, pp. 35-46.
3. D. R. Volters and J. J. Van Der Schoot " Dielectric Breakdown in MOS Devices", Philips Res. J., vol. 40, pp. 115-192, 1985.
4. 2 Systems" Proc. of 18th Yugosl. Conf. MIEL'90, Ljubljana 1990, pp. 399-402.