Filling contacts and vias: A progress report

Semiconductor International

Volumn 19, Issue 2, 1996, Pages 89-94

  Singer, Peter ^a  

^a NONE

Author keywords

Chemical vapor deposition; Interconnects; Physical vapor deposition

Indexed keywords

EID: 0348005465     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. 1994 National Technology Roadmap for Semiconductors published by the Semiconductor Industry Association, San Jose, Calif.
2. P. Singer, "1995: Looking Down the Road to Quarter-Micron Production," Semiconductor International, Jan. 1995, p. 46.
3. A Paranjpe, "Chemical Vapor Deposition TiN Process for Contact/Via Barrier Applications," J. Vac. Sci. Technol. B 13(5), Sep/Oct 1995, p. 2105.
4. P. Burggraaf, "Straightening Out Sputter Deposition," Semiconductor International, Aug. 1995, p. 69.
5. J. Ryan et al, "Collimated Sputtering of Titanium and Titanium Nitride Films," MRS Bulletin, Nov. 1995, p. 42.
6. G. Dixit et al, "A Novel 0.25 μm Via Plug Process Using Low Temperature CVD Al/TiN," International Electron Devices Meeting, 1995.
7. K. Sugai et al, "Aluminum CVD with New Gas Phase Pretreatment Using TDMAT for ULSI Metalization," J. Vac. Sci. Technol. B 13 (5), Sept./Oct., 1995, p. 2115.
8. R. Joshi et al, "Low Temperature, Low Resistivity Sub-half Micron Via/Interconnect Structure Using Reaction of Al-Alloys and Germane," International Electron Devices Meeting, 1995.
9. Z. Shterenfeld-Lavie et al., "A 3-Level, 0.35 μm Interconnection Process Using an Innovative, High Pressure Aluminum Plug Technology."