메뉴 건너뛰기




Volumn 80, Issue 7, 1996, Pages 3734-3738

The active dopant concentration in ion implanted indium tin oxide thin films

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0348002662     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363324     Document Type: Article
Times cited : (18)

References (15)
  • 6
    • 33646202250 scopus 로고
    • E. Burstein, Phys. Rev. 93, 632 (1954); T. S. Moss, Proc. Phys. Soc. London, Sect. B 67, 775 (1954).
    • (1954) Phys. Rev. , vol.93 , pp. 632
    • Burstein, E.1
  • 14
    • 0026762227 scopus 로고
    • Ph. Parent, H. Dexpert, G. Tourillon, and J.-M. Grimal, J. Electrochem. Soc. 139, 276 (1992); ibid. 139, 282 (1992).
    • (1992) J. Electrochem. Soc. , vol.139 , pp. 282
  • 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.