High-dose ion implantation using a high-current plasma lens

Surface and Coatings Technology

Volumn 128-129, Issue 1, 2000, Pages 15-20

  Goncharov, A A ^a   Protsenko, I M ^a   Yushkov, G Yu ^b   Monteiro, O R ^c   Brown, I G ^c  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b INSTITUTE OF HIGH CURRENT ELECTRONICS   (Russian Federation)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Beam focussing; Ion beams; Ion implantation; Materials synthesis; Plasma lens; Surface modification

Indexed keywords

ANNEALING; COBALT COMPOUNDS; CURRENT DENSITY; ION BEAMS; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SURFACE TREATMENT; SYNTHESIS (CHEMICAL);

PLASMA LENS;

ION IMPLANTATION;

EID: 0347947574     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)00637-X     Document Type: Article

References (12)

1. I.G. Brown, Rev. Sci. Instrum. 65 (1994) 3061.
2. A. Morozov, Dokl. Acad. Nauk USSR 163 (1965) 1363.
3. A. Morozov, S. Lebedev, Reviews of Plasma Physics, in: M. Leontovich (Ed.), New York: Consultants Bureau, 1975.
4. D. Gabor, Nature 160 (1947) 89.
5. A. Goncharov, A. Dobrovolsky, I. Litovko, I. Protsenko, V. Zadorodzny, IEEE Trans. Plasma Sci. 25 (1997) 709.
6. A.A. Goncharov, A.N. Dobrovolsky, A.V. Zatuagan, I.M. Protsenko, IEEE Trans. Plasma Sci. 21 (1993) 573.
7. A.A. Goncharov, A.V. Zatuagan, I.M. Protsenko, IEEE Trans. Plasma Sci. 21 (1993) 578.
8. A.A. Goncharov, I.M. Protsenko, G.Yu. Yushkov, I.G. Brown, Appl. Phys. Lett. 75 (1999) 911.
9. I.G. Brown, X. Godechot, IEEE Trans. Plasma Sci. 19 (1991) 713.
10. A. Anders, Phys. Rev. E 55 (1997) 969.
11. L.R. Doolittle, Nucl. Instrum. Methods B9 (1985) 344.
12. J. Zhang, X. Ye, J. Chang, S. Bernard, Mater. Lett. 32 (1997) 121.