Antisite creation in ternary semiconductors by transmutation doping

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 928-932

  Dietrich, M ^a,b   Camard, C ^b   Potzger, K ^c   Unterricker, S ^d   Weber, A ^c  

^a SAARLAND UNIVERSITY   (Germany)

^b CERN   (Switzerland)

^c HAHN MEITNER INSTITUT   (Germany)

^d TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

Hyperfine interactions; Ternary semiconductors; Transmutation doping

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTALLIZATION; DOPING (ADDITIVES); RADIOACTIVE MATERIALS; SPECTROSCOPIC ANALYSIS; TERNARY SYSTEMS;

HYPERFINE INTERACTIONS; TERNARY SEMICONDUCTORS; TRANSMUTATION DOPINGS;

SEMICONDUCTOR MATERIALS;

EID: 0347946863     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.202     Document Type: Conference Paper

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