In situ spectroscopic measurement of defect formation in SiO2 induced by femtosecond laser irradiation

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 986-989

  Fukata, N ^a   Yamamoto, Y ^a   Murakami, K ^a   Hase, M ^b   Kitajima, M ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

E center; In situ spectroscopic measurement; Self trapped exciton; SiO2

Indexed keywords

CRYSTAL DEFECTS; EXCITONS; LIGHT TRANSMISSION; PARAMAGNETIC RESONANCE; REAL TIME SYSTEMS; SILICA; SPECTROSCOPY; ULTRASHORT PULSES;

OXYGEN VACANCIES; SELF-TRAPPED EXCITONS;

LASER BEAM EFFECTS;

EID: 0347946859     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.114     Document Type: Conference Paper

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