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Volumn 340-342, Issue , 2003, Pages 870-873
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Electronic properties of Mn acceptors in (In,Mn)As grown by metalorganic vapor phase epitaxy
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Author keywords
Ferromagnetic semiconductors; Impurity levels; Manganese; Thin films
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Indexed keywords
ACTIVATION ENERGY;
ATMOSPHERIC PRESSURE;
ELECTRONIC PROPERTIES;
ENERGY DISPERSIVE SPECTROSCOPY;
FERROMAGNETISM;
HALL EFFECT;
HOLE MOBILITY;
IONIZATION;
MANGANESE;
MOLECULAR BEAM EPITAXY;
PERMITTIVITY;
SCREENING;
SEMICONDUCTOR DOPING;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
HALL COEFFICIENT;
IMPURITY LEVELS;
IONIZATION ENERGIES;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 0347764758
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2003.09.223 Document Type: Conference Paper |
Times cited : (10)
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References (14)
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