Optical orientation and spin relaxation of resident electrons in n-doped InAs/GaAs self-assembled quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 20, Issue 3-4, 2004, Pages 404-411

  Laurent, S ^a   Krebs, O ^a   Cortez, S ^a   Senes, M ^a   Marie, X ^a   Amand, T ^a   Voisin, P ^a   Gerard J M ^b  

^a CNRS   (France)

^b CEA GRENOBLE   (France)

Author keywords

InAs quantum dot; Spin relaxation; Trion

Indexed keywords

ANISOTROPY; DOPING (ADDITIVES); EXCITONS; GROUND STATE; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

ELECTRON HOLE EXCHANGE; OPTICAL ORIENTATION; SPIN RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0347758828     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.08.046     Document Type: Conference Paper

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