Carbon tetrabromide doping memory effect, incorporation efficiency, and InAlAs/InGaAs heterojunction bipolar transistor application

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2301-2304

  Hwang, W Y ^a,b   Micovic, M ^a   Miller, D L ^a   Geva, M ^b  

^a The Pennsylvania State University   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347601284     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588925     Document Type: Article

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