Ti:sapphire crystal used in ultrafast lasers and amplifiers

Journal of Crystal Growth

Volumn 261, Issue 4, 2004, Pages 514-519

  Dong, Jun ^a,b   Deng, Peizhen ^a  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

A1. Doping; A2. Single crystal growth; B1. Titanium doped sapphire; B3. Solid state lasers

Indexed keywords

AMPLIFIERS (ELECTRONIC); DOPING (ADDITIVES); HEAT TRANSFER; SAPPHIRE; SINGLE CRYSTALS; SOLID STATE LASERS; TEMPERATURE DISTRIBUTION; ULTRAFAST PHENOMENA;

OPTICAL HOMOGENEITY; PULSE WIDTH;

CRYSTALS;

EID: 0347599262     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.049     Document Type: Article

References (6)

1. Koechner W. Solid-State Laser Engineering. 4th Edition:1996;Springer, Berlin.
2. Perry M.D., Pennington D., Stuart B.C., et al. Opt. Lett. 24(3):1999;160.
3. Yanakawa K., Aoyama M., Matsuoka S., et al. Opt. Lett. 23(18):1998;1468.
4. Wang H., Backus S., Hang Z., et al. J. Opt. Soc. Am. B. 16(10):1999;1790.
5. Patterson F.G., Bonlie J., Price D., et al. Opt. Lett. 24(14):1999;963.
6. Xu J., Zhou Y., Zhou G., Xu K., Deng P., Xu J. J. Crystal Growth. 193:1998;123.