New methods of metrology data analysis during semiconductor processing and application to rapid thermal processing

Materials Science in Semiconductor Processing

Volumn 1, Issue 3-4, 1998, Pages 195-200

  Boin, Manuela ^a   Lerch, Wilfried ^b  

^a Boln GmbH   (Germany)

^b STEAG AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347569926     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(98)00043-2     Document Type: Article

References (5)

1. WAFERMAP for Win95/NT 1.0. Users manual. Boin (GmbH), 1998.
2. Boin M. Methods of separation of input and process distributions from measurement data sets. Internal report. Manuela Boin Scientific Software, 1998.
3. Nenyei Z, Walk H, Knarr T. Defect guarded rapid thermal processing. J Electrochem Soc 1993;140(6):1728-33.
4. Lerch W. Ion implantation and rapid thermal annealing in synergy for shallow junction formation. Phys Status Solidi (a) 1996;158:117-36.
5. Nenyei Z, Wein G, Lerch W, Grunwald C, Gelpey J, Wallmüller S. RTP development requirements. In: Proceedings of the 5th International Conf. on Advanced Thermal Processing of Semiconductors RTP'97. New Orleans/Louisiana, 1997. p. 35-43.