메뉴 건너뛰기




Volumn 131, Issue 7-8, 1988, Pages 441-444

Metallization and crystallization of semiconducting amorphous Ga20Te80 alloy under high pressure

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0347565702     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/0375-9601(88)90297-6     Document Type: Article
Times cited : (9)

References (25)
  • 8
    • 0001641683 scopus 로고
    • Lattice-dynamical and photoelastic properties of GaSe under high pressures studied by Raman scattering and electronic susceptibility
    • (1987) Physical Review B , vol.35 , pp. 3860


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.