Recombination luminescence from defects in boron-ion implantation-doped diamond using low fluences

Materials Research Innovations

Volumn 1, Issue 4, 1998, Pages 243-253

  Prins, Johan F ^a  

^a UNIVERSITY OF THE WITWATERSRAND   (South Africa)

Author keywords

Acceptors; Cathodoluminescence; Diamond; Donors; Doping; Electronic properties; Excitons; Ion implantation; Optical properties; Radiation damage; Recombination radiation

Indexed keywords

EID: 0347437262     PISSN: 14328917     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100190050049     Document Type: Article

References (5)

1. Field JE (1992) The Properties of Natural and Synthetic Diamond. Academic, London San Diego New York Boston Sydney Tokyo Toronto
2. Berman R (1965) Physical Properties of Diamond. Clarendon, Oxford
3. Field JE (1979) The Properties of Diamond. Academic, London New York San Fransisco
4. Dyer HB, Raal FA, du Preez L, Loubser JHN (1965) Phil Mag 11:763
5. Farrer RJ (1969) Solid State Commun 7: 685