Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots

Superlattices and Microstructures

Volumn 25, Issue 1-2, 1999, Pages 131-136

  Shen, J X ^a,b   Oka, Y ^a,b   Cheng, H H ^c   Tsai, F Y ^d   Lee, C P ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Hot excitation relaxation; Self organized quantum dots; Transient photoluminescence

Indexed keywords

EID: 0347416077     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1998.0625     Document Type: Article

References (5)

1. F. Y. Tsai and C. P. Lee, J. Appl. Phys. 84, 2624 (1998).
2. G. Bacher, R. Spiegel, T. Kümmell, R. Weigand, A. Forchel, B. Jobst, D. Hommel, and G. Landwehr, J. Cryst. Growth, 184/185, 330 (1998).
3. H. H. Cheng, R. J. Nicholas, F.-Y. Tsai, and C. P. Lee, Proc. 1997 Int. Semiconductor Device Research Symposium, Engineering Academic Outreach, University of Virginia, Charlottesville, VA, U.S.A. p. 31.
4. U. Bockelmann, Phys. Rev. B48, 17637 (1993).
5. E. Kurtz, J. X. Shen, M. Y. Shen, T. Sekiguchi, Z. Zhu, Y. Oka, T. Goto, and T. Yao, 11th Int. Conf. Superlattices, Microstructures and Microdevices, Hurghada, Egypt, 1998.