Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy

Journal of Crystal Growth

Volumn 261, Issue 2-3, 2004, Pages 330-335

  Hara, S ^a   Lampalzer, M ^a   Torunski, T ^a   Volz, K ^a   Treutmann, W ^a   Stolz, W ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nanomaterials; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTALS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETOOPTICAL DEVICES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SQUIDS; SUBSTRATES; VAPOR PRESSURE;

CLUSTER FORMATION; WHISKER GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0347415799     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.064     Document Type: Conference Paper

References (9)

1. H. Ohno, J. Magn. Magn. Mater. 200 (1999) 110, and references therein.
2. Koshihara S., Oiwa A., Hirasawa M., Katsumoto S., Iye Y., Urano C., Takagi H., Munekata H. Phys. Rev. Lett. 78:1997;4617.
3. M. Tanaka, J. Crystal Growth 201/202 (1999) 660, and references therein.
4. Shimizu H., Tanaka M. Appl. Phys. Lett. 81:2002;5246.
5. Lampalzer M., Volz K., Treutmann W., Nau S., Torunski T., Megges K., Lorberth J., Stolz W. Inst. Phys. Conf. Ser. No. 170:2002;249.
6. Blattner A.J., Wessels B.W. J. Vac. Sci. Technol. B. 20:2002;1582.
7. S. Hara, submitted for publication.
8. Slupinski T., Munekata H., Oiwa A. Appl. Phys. Lett. 80:2002;1592.
9. Ohya S., Shimizu H., Higo Y., Sun J., Tanaka M. Jpn. J. Appl. Phys. 41:2002;L24.