The electrical turn-on characteristics of vertical-cavity surface-emitting lasers

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4104-4106

  Liu, Yang ^a,b   Choquette, Kent D ^a   Hess, Karl ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRONIC DENSITY OF STATES; OPTICAL PROPERTIES; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; SIMULATORS; SPONTANEOUS EMISSION; THERMODYNAMIC PROPERTIES; THRESHOLD VOLTAGE;

ELECTRICAL TURN ON; LASER SIMULATOR; RECOMBINATION RATES; SHOCKLEY READ HALL RECOMBINATION; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0347410995     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628816     Document Type: Article

References (9)

1. K. Hess, Advanced Theory of Semiconductor Devices (IEEE, Piscataway, NJ, 2000), and references therein.
2. C. H. Henry, R. A. Logan, and F. R. Merritt, Appl. Phys. Lett. 31, 454 (1977).
3. M. Fukuda, J. Appl. Phys. 59, 4172 (1986).
4. K. D. Choquette, W. W. Chow, K. M. Geib, and R. P. Schneider, Jr., Appl. Phys. Lett. 68, 3689 (1996).
5. K. D. Choquette, W. W. Chow, G. R. Hadley, H. Q. Hou, and K. M. Geib, Appl. Phys. Lett. 70, 823 (1997).
6. S. M. Sze, Semiconductor Devices: Physics and Technology, 2nd ed. (Wiley, New York, 2002).
7. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995), and references therein.
8. M. Grupen and K. Hess, IEEE J. Quantum Electron. 34, 120 (1998).
9. F. Oyafuso, P. von Allmen, M. Grupen, and K. Hess, VLSI Design 8, 463 (1998).