A new high pressure - Low temperature process for the synthesis and the crystal growth of gallium nitride

High Pressure Research

Volumn 22, Issue 3-4, 2002, Pages 585-588

  Denis, A ^a   Goglio, G ^a,b   Largeteau, A ^a,b   Demazeau, G ^a,b  

^a Ecl Natl Sup Chim Phys Bordeaux   (France)

^b INST CHIM MATIERE COND BORDEAUX   (France)

Author keywords

Ammonia solvent; Gallium nitride; High pressure; Solvothermal synthesis; Supercritical conditions

Indexed keywords

ADDITIVES; AMMONIA; CRYSTAL GROWTH; HIGH PRESSURE EFFECTS; LOW TEMPERATURE EFFECTS; MELTING; SCANNING ELECTRON MICROSCOPY; SOLVENTS; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

AMMONIA SOLVENTS; HIGH PRESSURE; SOLVOTHERMAL SYNTHESIS; SUPERCRITICAL CONDITIONS;

GALLIUM NITRIDE;

EID: 0347371644     PISSN: 08957959     EISSN: None     Source Type: Journal    
DOI: 10.1080/08957950212409     Document Type: Article

References (6)

1. Duboz, J. Y. (2000). C.R.A.S., tl, série IV, pp. 71-80.
2. Nakamura, S. Proc. MRS Fall Meeting 1998. Boston, USA.
3. Porowski, P. (1995). Proc. XXIII ISSC, 87, 295-302.
4. Demazeau, G., Lafon, F., Curtet, J. and Largeteau, A. (1994). High Pressure Research, 12, 329-335.
5. Ketchum, D. R. and Kolis, J. W. (2001). J. Cryst. Growth, 222, 431-434.
6. Yamane, H., Shimada, M., Clarke, S. J. and Disalvo, F. J. (1997). Chem. Mater., 9, 413-416.