Ammonia as an active doping source gas of hydrogenated amorphous germanium films

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 19, 1996, Pages 12566-12569

  Chambouleyron, I ^a   Campomanes, R ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347355314     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.12566     Document Type: Article

References (15)

1. K. L. Brower, Phys. Rev. Lett. 44, 1627 (1980); also Phys. Rev. B 26, 6040 (1982).
2. A. Campbell, J. B. Mitchell, J. Schewchun and D. A. Thompson, Can. J. Phys. 53, 303 (1975).
3. See, for example, R. A. Street, Hydrogenated Amorphous Silicon (Cambridge Univ. Press, Cambridge, 1991).
4. W. Spear and P. LeComber, Solid State Commun. 17, 1193 (1975).
5. W. Spear and P. LeComber, Philos. Mag. 33, 935 (1976).
6. R. A. Street, Phys. Rev. Lett. 49, 1187 (1982).
7. J. Robertson, Philos. Mag. B 63, 47 (1991).
8. B. Dunnett, D. I. Jones and A. D. Stewart, Philos. Mag. B 53, 159 (1986).
9. A. R. Zanatta and I. Chambouleyron, Braz. J. Phys. 24, 434 (1994).
10. I. Chambouleyron and A. R. Zanatta, Appl. Phys. Lett. 62, 58 (1993).
11. A. R. Zanatta and I. Chambouleyron, Phys. Rev. B 46, 2119 (1992).
12. T. Drusedau, B. Schroeder and H. Hoechsner, Solid State Commun. 79, 799 (1991).
13. D. V. Tsu, G. Lucovsky and M. J. Mantini, Phys. Rev. B 33, 7069 (1986).
14. F. C. Marques, I. Chambouleyron and F. Evangelisti, J. Non-Cryst. Solids 114, 561 (1989).
15. See, for example, N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Semiconductors, 2nd ed. (Clarendon, Oxford, 1979).