Transport properties of silicon δ-doped GaAs in high electron density regime

Acta Physica Polonica A

Volumn 92, Issue 4, 1997, Pages 727-732

  Buyanov, A V ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

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EID: 0347287168     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.92.727     Document Type: Article

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