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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 261, Issue 3-4, 1999, Pages 197-204

Preparation and electrical characterization of low-dimensional net structures made out of GaAs epitaxial layers

(4) Govor, L V a,b Goldbach, M a Bashmakov, I A b Parisi, J a

a UNIVERSITY OF OLDENBURG (Germany)

b BELARUSIAN STATE UNIVERSITY (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SOLVENTS; TEMPERATURE;

DIFFERENTIAL CONDUCTIVITY; ELECTRIC CHARACTERIZATION; ELECTRICAL CHARACTERIZATION; LOCAL ACTIVATION ENERGIES; LOW-TEMPERATURE REGIME; TEMPERATURE REGIMES; TRANSPORT MECHANISM; VARIABLE RANGE HOPPING;

ACTIVATION ENERGY;

EID: 0347146877 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/S0375-9601(99)00607-6 Document Type: Article

Times cited : (4)

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