High-temperature irradiation of gallium arsenide

Semiconductors

Volumn 31, Issue 10, 1997, Pages 1060-1061

  Peshev, V V ^a   Smorodinov, S V ^a  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347139945     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187026     Document Type: Article

References (6)

1. D. Stievenard and J. C. Bourgoin, J. Appl. Phys. 59, 743 (1986).
2. V. N. Brudnyi and V. V. Peshev, Phys. Status Solidi (A) 105, K57 (1988).
3. D. Pons and J. C. Bourgoin, J. Phys. C: Sol. St. Phys. 18, 3839 (1985).
4. V. A. Ivanyukovich, V. I. Karas', and V. M. Lomako, Fiz. Tekh. Poluprovodn. 24, 1427 (1990) [Sov. Fiz. Semicond. 24, 893 (1990)].
5. V. A. Ivanyukovich, V. I. Karas', and V. M. Lomako, Fiz. Tekh. Poluprovodn. 24, 1427 (1990) [Sov. Fiz. Semicond. 24, 893 (1990)].
6. M. W. Thompson, Defects and Radiation Damage in Metals, Cambridge University Press, Cambridge, (1969).