On point defect gettering by back-side damage in the Si-SiO2 system

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1027-1030

  Kropman, D ^a   Dolgov, S ^b   Karner T ^c  

^a Estonian Maritime Academy   (Estonia)

^b UNIVERSITY OF TARTU   (Estonia)

^c ESTONIAN ACADEMY OF SCIENCES   (Estonia)

Author keywords

Diffusion of defects; ESR; Gettering

Indexed keywords

PARAMAGNETIC RESONANCE; SILICA;

DIFFUSION LENGTH; GETTERING; OXIDATION CONDITIONS; SIGNAL INTENSITIES;

POINT DEFECTS;

EID: 0347111349     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1027     Document Type: Article

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