Numerical simulation of low-field thermally stimulated conductivity in a-Si:H

Journal of Non-Crystalline Solids

Volumn 266-269 A, Issue , 2000, Pages 376-379

  Smail, T ^a   Aoucher, M ^a   Mohammed Brahim, T ^b  

^a UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347110829     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00734-6     Document Type: Article

References (11)

1. R.R. Haering, E.N. Adams, Phys. Rev. 117 (1960) 451.
2. J.G. Simmons, G.W. Taylor, M.C. Tam, Phys. Rev. B 7 (1973) 3714.
3. J. Dijon, Solid State Commun. 48 (1983) 79.
4. C. Longeaud, J.P. Kleider, D. Mencaraglia, T. Mohammed-Brahim, A. Rahal, Mater. Res. Soc. Symp. Proc. 192 (1990) 311.
5. M. Zhu, Appl. Phys. A 52 (1991) 285.
6. J.-H. Zhou, S.R. Elliott, Phys. Rev. B 46 (1992) 9792.
7. S.D. Baranovskii, M. Zhu, T. Faber, F. Hensel, P. Thomas, M.B. von der Linden, W.F. van der Weg, Phys. Rev. B 55 (1997) 16226.
8. T. Small, T. Mohammed-Brahim, Philos. Mag. B 64 (1991) 675.
9. L. Vieux-Rochas, A. Chenevas-Paule, J. Non-Cryst. Solids 35&36 (1980) 737.
10. D.S. Misra, V.A. Singh, S.C. Agarwal, Phys. Rev. B 32 (1985) 4052.
11. M. Aoucher, T. Mohammed-Brahim, B. Fortin, J. Appl. Phys. 79 (1996) 7041.