Impact of electron irradiation on particle track etching response in polyallyl diglycol carbonate (PADC)

Pramana - Journal of Physics

Volumn 54, Issue 5, 2000, Pages 777-784

  Mishra, R ^a   Tripathy, S P ^a   Kulshrestha, A ^a   Srivastava, A ^a   Ghosh, S ^a   Dwivedi, K K ^a,c   Khathing, D T ^a   Muller M ^b   Fink, D ^b  

^a NORTH EASTERN HILL UNIVERSITY   (India)

^b HAHN MEITNER INSTITUT   (Germany)

^c RAJIV GANDHI UNIVERSITY   (India)

Author keywords

140 MeV 28Si; 2 MeV electron; Bulk etch rate; Critical angle of etching; Detection efficiency; Dose dependent track registration properties; Etching response; PADC; Scanning electron microscopy

Indexed keywords

EID: 0347107325     PISSN: 03044289     EISSN: None     Source Type: Journal    
DOI: 10.1007/s12043-000-0123-0     Document Type: Article

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