Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

Semiconductors

Volumn 32, Issue 10, 1998, Pages 1075-1076

  Agekyan, V F ^a   Ivanov Omskii V I ^b   Knyazevskii V N ^b   Rud', Yu V ^b   Rud, V Yu ^c  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347089648     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187570     Document Type: Article

References (3)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 30, 1998 (1991).
2. Yoshida, J. Cryst. Growth 136, 37 (1994).
3. S. G. Konnikov, V. Yu. Rud', Yu. V. Rud', D. Melebaev, A. Berkeliev, M. Serginov, and S. Televov, Jpn. J. Appl. Phys. 32S, 515 (1993).