Patterning of 100 nm features using X-ray lithography

Journal of Photopolymer Science and Technology

Volumn 10, Issue 4, 1997, Pages 613-618

  Krasnoperova, Azalia A ^a,b   Hector, Scott ^e   Pomerene, Andrew ^c,d   Lamberti, Angela ^c   Wind, Shalom ^c   Viswanathan, Raman ^c   Ito, Hiroshi ^f  

^a IBM MICROELECTRONICS   (United States)

^b LOCKHEED MARTIN   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d Dominion Semiconductor   (United States)

^e MOTOROLA INC   (United States)

^f IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Chemically amplified resists; Nanolithography; X ray lithography

Indexed keywords

EID: 0346997069     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.10.613     Document Type: Article

References (2)

1. W. Waskiewicz, S. Berger, L. Harriott, M. Mkrtchyan, S. Bowler, J. Gibson, Proceedings of SPIE 2522 (1995) 13
2. D. Tichenor, G. Kubiak, R. Stulen, Proceedings of SPIE 2523 (1995) 23