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Volumn 88, Issue 7, 2000, Pages 3968-3975

Influence of microwave energy on semiconductors during ion implantation process

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0346976419     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1289218     Document Type: Article
Times cited : (1)

References (22)
  • 1
    • 0346318510 scopus 로고    scopus 로고
    • I. Pages Application Motorola Patent No. FR9016040 (filed 20.12.90) thermal annealing by microwave assisted focused beam
    • H.-C. Gay and D. Griot, I. Pages Application Motorola Patent No. FR9016040 (filed 20.12.90) thermal annealing by microwave assisted focused beam.
    • Gay, H.-C.1    Griot, D.2
  • 2
    • 0348209093 scopus 로고
    • Master thesis, Centre Régional Associé de Toulouse, France
    • P. Gibert, Master thesis, Centre Régional Associé de Toulouse, France, 1992.
    • (1992)
    • Gibert, P.1
  • 3
    • 0346318509 scopus 로고
    • Master thesis, Centre Régional Associé de Toulouse, France
    • J. Lin-Kwang, Master thesis, Centre Régional Associé de Toulouse, France, 1994.
    • (1994)
    • Lin-Kwang, J.1
  • 22
    • 0347579264 scopus 로고    scopus 로고
    • SOITEC site technologique ASTEC 38041, Grenoble, France
    • SOITEC site technologique ASTEC 38041, Grenoble, France.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.